MEMS Switch with Reduced Dielectric Charging Effect

ABSTRACT

The present disclosure provides methods of fabricating a micro-electro-mechanical systems (MEMS) switch. The methods include providing a substrate, forming a first dielectric layer disposed above the substrate, forming a bump above the first dielectric layer, providing a movable member including a top actuation electrode, and forming at least one support member that includes the first dielectric layer and is directly below the top actuation electrode. The top actuation electrode is electrically coupled to the bump.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser.No. 12/951,492, which was filed on Nov. 22, 2010, now allowed, theentire disclosure of which is incorporated herein by reference.

BACKGROUND

A variety of micro-electro-mechanical systems (MEMS) switches are in usein radar and communication systems as well as other high frequencycircuits for controlling RF signals. Many of these MEMS switchesgenerally have electrostatic elements, such as opposed electrodes, whichare attracted to one another upon application of an actuation voltage(e.g., from a DC voltage source), resulting in the establishment of ahigh capacitive coupling and/or reduced electrical impedance betweenspaced apart signal electrodes. Thus, a signal is allowed to propagatebetween the spaced apart signal electrodes.

In the capacitive-type MEMS switch, a dielectric layer is deposited ontop of a first signal electrode and underneath a second moveable signalelectrode. With this arrangement, the full actuation voltage may appearacross the dielectric layer resulting in a high electric field acrossthe dielectric layer. This high field can lead to charge accumulation onthe dielectric surface as well as in the bulk dielectric (also known asthe dielectric charging effect), which can lead to switch failure and/orreliability issues from stiction and/or degradation of capacitancevalues. Contact-type MEMS switches have utilized dielectric layersbetween the top and bottom actuation electrodes to prevent electricalshorting of the actuation electrodes, and these dielectric layersbetween the top and bottom actuation electrodes may encounter similarproblems from the dielectric charging effect, which can lead to devicereliability issues and/or performance degradation.

Prior designs have utilized dielectric or metal bumps on the actuationelectrode in an attempt to prevent stiction, but the dielectric bump hastrapped charge, and the metal bump has caused issues with the floatingvoltage potential. Accordingly, improved MEMS switches and methods offabricating such MEMS switches are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart of a method of fabricating amicro-electro-mechanical systems (MEMS) switch in accordance with anembodiment of the present disclosure.

FIGS. 2A and 2B are a top view and a cross-sectional view, respectively,of a MEMS switch in accordance with an embodiment of the presentdisclosure.

FIG. 3 is a cross-sectional view of a MEMS switch in accordance withanother embodiment of the present disclosure.

FIGS. 4A and 4B are a top view and a cross-sectional view, respectively,of a MEMS switch in accordance with another embodiment of the presentdisclosure.

FIG. 5 is a cross-sectional view of a MEMS switch in accordance with yetanother embodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof various embodiments. Specific examples of components and arrangementsare described below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

It is understood that several processing steps and/or features of adevice may be only briefly described, such steps and/or features beingwell known to those of ordinary skill in the art. Also, additionalprocessing steps or features can be added, and certain of the followingprocessing steps or features can be removed and/or changed while stillimplementing the claims. Thus, the following description should beunderstood to represent examples only, and are not intended to suggestthat one or more steps or features is required. Furthermore, asdescribed above, specific embodiments may be described herein which areexemplary only and not intended to be limiting.

FIG. 1 is a flowchart illustrating a method 100 for fabricating a MEMSswitch in accordance with an embodiment of the present disclosure. Themethod 100 begins at block 102 where a substrate is provided. At block104, a first dielectric layer is formed above the substrate. At block106, a bottom signal electrode, a bump, and a bottom actuation electrodeare formed above the first dielectric layer. At block 108, the bottomsignal electrode is enclosed with a second dielectric layer. For acontact switch, an additional bottom contact electrode is deposited andpatterned over the second dielectric layer. At block 110, a movablebridge member is provided. In one embodiment, the movable member may besupported by at least one support member of the first dielectric layer.The support member can include the first dielectric layer or acombination of the first dielectric layer and other layers. According toan aspect, the movable member includes a top signal electrode disposedabove the bottom signal electrode and a top actuation electrode disposedabove the bottom actuation electrode and the bump. At block 112, the topactuation electrode is electrically coupled to the bump, and in oneembodiment is electrically coupled to the bump by at least one via andat least one line through the first dielectric layer. Thus, the bumpwill have substantially the same voltage potential as the top actuationelectrode for reducing dielectric charging across intervening dielectriclayers.

During operation, the top actuation electrode of the movable bridgemember is drawn toward the bottom actuation electrode upon applicationof a voltage (e.g., a DC voltage) to the bottom actuation electrode,thereby also drawing the top signal electrode of the movable membertoward the bottom signal electrode until contact is made with the seconddielectric layer. In other words, a voltage difference is appliedbetween top and bottom actuation electrodes to induce an electrostaticforce to move the movable member.

For the case of a capacitive-type switch, with the top signal electrodecontacting the second dielectric layer, the switch capacitance issignificantly increased while the switch impedance is significantlylowered, allowing a signal to propagate between the top and bottomsignal electrodes, and thus turning “on” the switch.

Accordingly, method 100 provides for advantageously reducing thedielectric charging effect in a MEMS switch by not including adielectric layer on the bottom actuation electrode, thereby removing asource of dielectric charging. Furthermore, a bump having a largerthickness than the bottom actuation electrode is provided to prevent anelectrical short circuit between the top and bottom actuationelectrodes, and the bump is also electrically coupled to the topactuation electrode (on the movable member) to substantially prevent avoltage difference between the bump and top actuation electrode, therebyfurther reducing the dielectric charging effect induced by a voltagedifference.

In addition, the actuation electrodes are electrically separate from thesignal electrodes (e.g., the bottom actuation electrode and the bottomsignal electrode are discrete electrodes set apart from one another, andthe top actuation and signal electrodes are also discrete electrodesapart from one another), thereby avoiding a charging effect incapacitive-type switches and a short circuit issue in contact-typeswitches. Thus, the present disclosure substantially removes any DCvoltage from the second dielectric layer used in the MEMS switch, whicheliminates the dielectric charging across the dielectric layer.

Referring now to FIGS. 2A and 2B, FIG. 2A is a top view and FIG. 2B is across-sectional view along line 2B-2B of a capacitive-type MEMS switch200 at various stages of fabrication in accordance with embodiments ofthe present disclosure. MEMS switch 200 includes a substrate 202, afirst dielectric layer 204 disposed above the substrate 202, and abottom metal layer 206 including a bottom signal electrode 218, a bump214 a, and a bottom actuation electrode 212 a, 216 a disposed above thefirst dielectric layer 204. The MEMS switch 200 further includes asecond dielectric layer 219 enclosing the bottom signal electrode 218,and a movable bridge member 208 including a top signal electrode 222disposed above the bottom signal electrode 218 and a top actuationelectrode 220 a disposed above the bottom actuation electrode 212 a andthe bump 214 a. In one aspect, first dielectric layer 204 includes atleast one support member 205 a for supporting the movable bridge member208 while providing a cavity 228 between the movable bridge member 208and the second dielectric layer 219 and the metal layer 206. In oneembodiment, the support member 205 a can include the first dielectriclayer 204 or a combination of the first dielectric layer 204 and otherlayers (e.g., second dielectric layer 219, bottom metal layer 206, andthe like). In one example, cavity 228 may be filled with air or anothergas, and may be a vacuum. The movable bridge member 208 further includesa structure layer 210 for allowing movement of the top actuationelectrode 220 a and the top signal electrode 222.

Upon application of a voltage from a source 240 to the bottom actuationelectrode 212 a, the top actuation electrode 220 a is drawn byelectrostatic attraction (i.e., a voltage difference between top andbottom actuation electrodes generates an electrostatic force) toward thebottom actuation electrode 212 a. Simultaneously, top signal electrode222 moves toward the bottom signal electrode 218 until top signalelectrode 222 contacts the top surface of second dielectric layer 219.The switch capacitance is significantly increased and the switchimpedance is significantly lowered, allowing a signal to propagatebetween the top and bottom signal electrodes 222 and 218. In accordancewith the present disclosure, the top actuation electrode 220 a iselectrically coupled to the bump 214 a by vias 230 a, 234 a and a line232 a. Advantageously, the electrical connection between the bump andthe top actuation electrode prevents the break down of the bump and topactuation electrode when they contact each other. If the voltagepotentials were different on the bump and the top actuation electrode,there would be the break down when they contact each other. Thesubstantial elimination of the dielectric charging in the dielectriclayer 219 is fulfilled by separating the actuation and signalelectrodes, which allow an AC signal and no DC bias from beingtransmitted in the signal electrodes.

In other words, when different actuation voltages are applied to the top(e.g., electrode 220 a and/or 220 b) and bottom (e.g., electrode 212 aand/or 212 b) actuation electrodes, the voltage difference betweenactuation electrodes will induce a electrostatic force, which makes theswitch structure 208 bend down and contact the top signal electrode 222to the dielectric layer 219 above the bottom signal electrode 218. Thiscauses a large capacitive coupling between top signal electrode 222 andbottom signal electrode 218. The RF signal will transmit from bottomsignal electrode 218 to top signal electrode 222. For many cases, topsignal electrode 222 will be connected to ground and make the RF signalnot able to go through bottom signal electrode 218. When the voltagedifference is removed from the actuation electrodes, the switchstructure 208 will move back to its original position and cause a poorcapacitive coupling between top signal electrode 222 and bottom signalelectrode 218. Accordingly, the RF signal will not transmit to topsignal electrode 222 and will only go through bottom signal electrode218.

Disadvantageously, the actuation and signal electrodes are not separatedin conventional MEMS capacitive switches, thereby causing the actuationvoltage (bias voltage, typically DC) and RF signal (AC signal) to gothrough the same electrodes. Accordingly, there is dielectric chargingin the dielectric layer for the traditional capacitive switch.

In one example, substrate 202 is a silicon wafer. Alternatively oradditionally, the substrate of the MEMS device may include otherelementary semiconductor, such as germanium, or the substrate mayinclude a compound semiconductor, such as silicon carbide, galliumarsenic, indium arsenide, and/or indium phosphide. In another example,the substrate 202 may include a silicon-on-insulator (SOI) wafer orother structures and may be comprised of other materials, such as glass,quartz, and/or a ceramic material.

First dielectric layer 204 may be comprised of silicon oxides,carbonates, and/or nitrides in one example, deposited by one of variousapplicable deposition techniques, such as chemical vapor deposition(CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), andthe like. In one embodiment, first dielectric layer 204 may be a part ofat least one support member (e.g., support members 205 a, 205 b) forsupporting movable bridge member 208. Other numbers of support membersare within the scope of the present disclosure. Patterning, etch, and/orplanarization techniques and methods may be used to form firstdielectric layer 204 including support member 205 a. The support membercan also be part of the first dielectric layer or the combination of thefirst dielectric layer and other layers as previously noted.

Bottom signal electrode 218 and bottom actuation electrode 212 a, 216 amay be comprised of any applicable metal, such as aluminum, copper,tungsten, alloys thereof, and the like, and may be formed byelectroplating, physical vapor deposition (PVD), sputtering, or otherapplicable methods and techniques. Bump 214 a may also be comprised ofany applicable metal, such as aluminum, copper, tungsten, and the like,and may also be formed by PVD, plating, sputtering, or other applicablemethods and techniques. Patterning, etch, and/or planarizationtechniques and methods may be used to form the discrete and separatemetal layers of the bottom signal electrode 218, the bottom actuationelectrode 212 a, 216 a, and the bump 214 a. Bump 214 a is formed to havea larger thickness than the bottom actuation electrode 212 a (i.e., atop surface of bump 214 a is higher above dielectric 204 than a topsurface of bottom actuation electrode 212 a) to prevent an electricalshort circuit between the top and bottom actuation electrodes. Thebottom actuation electrode 212 a may be connected by a thin film biasresistor to a pad to which is applied the voltage signal from source240.

Bottom signal electrode 218 is enclosed within second dielectric layer219, having a top dielectric layer and two dielectric sidewalls in oneexample. A dielectric layer may be deposited by one of varioustechniques, such as CVD or the like, and made relatively thin and may beselected from a class of materials chosen for hardness, hydrophobicsurface, or other desired properties. The dielectric layer may then beformed into the second dielectric layer 219 by an isotropic etch througha patterned photoresist in one example, although variousphotolithographic patterning, etch, and/or polishing techniques areapplicable and may be used.

Top signal electrode 222 and top actuation electrode 220 a of movablebridge member 208 may be comprised of any applicable metal, such asaluminum, copper, tungsten, alloys thereof, and the like, and may beformed onto structure layer 210 by electroplating, physical vapordeposition, sputtering, or other applicable methods and techniques.

Structure layer 210 of movable bridge member 208 may include variousarchitectures for allowing movement of the top actuation electrode 220 aand the top signal electrode 222 upon application of a voltage from asource 240 to the bottom actuation electrode 212 a, such as a cantileverarchitecture or a torsion architecture. In one example, structure layer210 may include springs, movable arms, flexible membranes, and the liketo allow movement of the top electrodes. In order to lend rigidity tothe bridge member in the contact area, structure layer 210 may alsoprovide support and stiffness for a central bridge portion including thetop signal electrode 222 to assure good contact of the top signalelectrode 222 with the second dielectric layer 219 as well as to avoidbending of the bridge which could cause short circuiting.

As noted above, in one embodiment, no dielectric layer is formed on thebottom actuation electrode 212 a, thereby removing a source ofdielectric charging caused by a voltage difference between opposingactuation electrodes. Furthermore, bump 214 a having a larger thicknessthan the bottom actuation electrode 212 a is provided to prevent anelectrical short circuit between the top and bottom actuation electrodes220 a, 212 a. The bump 214 a is also electrically coupled to the topactuation electrode 220 a (on the movable bridge member) to make thevoltage potential substantially the same for the top actuation electrodeand the bump (or as a corollary to substantially prevent a voltagedifference between top actuation electrode and the bump), therebysubstantially preventing a break down of the bump and top actuationelectrode when they contact each other.

In addition, the actuation electrodes are electrically separate from thesignal electrodes, thereby avoiding a charging effect in capacitive-typeswitches and a short circuit issue in contact-type switches. In thisembodiment, the bottom actuation electrodes 212 a, 212 b and the bottomsignal electrode 218 are electrically discrete electrodes set apart fromone another (e.g., defined by a pattern layout), thereby making thesecond dielectric layer 219 sustain an AC signal without DC biasing asin conventional devices, which avoids the dielectric charging effectacross the second dielectric layer.

In another embodiment, the first dielectric layer 204 includes twosupport members 205 a, 205 b. Each of the support members 205 a, 205 bcan be part of the first dielectric layer or the combination of thefirst dielectric layer and other layers. Other numbers of supportmembers for supporting the movable bridge member 208 are within thescope of the present disclosure.

The MEMS switch 200 further includes a bottom signal electrode 218disposed between two bumps 214 a, 214 b, between two bottom actuationelectrodes 212 a, 212 b, and above the first dielectric layer 204between the two support members 205 a, 205 b. Movable bridge member 208includes top signal electrode 222 disposed above the bottom signalelectrode 218 and disposed between two top actuation electrodes 220 a,220 b. Each of the top actuation electrodes 220 a, 220 b is disposedabove a respective bottom actuation electrode 212 a, 212 b and arespective bump 214 a, 214 b. Each of the top actuation electrodes 220a, 220 b is also electrically coupled to the respective bump 214 a, 214b by at least one respective via 230 a, 230 b and one respective line232 a, 232 b through the first dielectric layer 204 and the respectivesupport members 205 a, 205 b.

Referring now to FIGS. 3-5, cross-sectional views are illustrated of aMEMS switch at a stage of fabrication in accordance with differentembodiments of the present disclosure. Similar elements to thosedescribed above and illustrated with respect to FIGS. 2A-2B are numberedthe same or similarly in FIGS. 3-5. The structures shown in FIGS. 3-5are fabricated by substantially the same steps and processes and includesubstantially similar structures as illustrated in and described abovewith respect to FIGS. 2A-2B. As such, the steps and structures forfabrication of the structures shown in FIGS. 3-5 may not be repeatedhere but are fully applicable in the following embodiments.

FIG. 3 illustrates a cross-sectional view of a capacitive-type MEMSswitch 300 in accordance with another embodiment of the presentdisclosure. MEMS switch 300 includes bumps 250 a, 250 b having adielectric layer 252 disposed above a metal layer 254. Dielectric layer252 may be comprised of various dielectric materials, such as siliconoxides, carbonates, and/or nitrides, and metal layer 254 may becomprised of various applicable metals, such as those comprising bottomactuation electrode 212 a, 212 b (e.g., aluminum, copper, tungsten, andthe like). The total thickness of bumps 250 a, 250 b is greater than thethickness of bottom actuation electrode 212 a. Similar to the embodimentdescribed above, each of the bumps 250 a, 250 b are electrically coupledto respective top actuation electrodes 220 a, 220 b by at least one via230 a, 230 b and one line 232 a, 232 b through the first dielectriclayer 204.

As noted above, the electrical connection between the bump and the topactuation electrode prevents the break down of the bump and topactuation electrode when they contact each other. If the voltagepotentials were different on the bump and the top actuation electrode,there would be the break down when they contact to each other.

In FIG. 3, the breakdown prevention of top actuation electrode and bumpis fulfilled by introducing the dielectric layer 252. The electricalconnections between top actuation electrode and bump is for theprevention of the dielectric charging in dielectric layer 252.

The substantial elimination of the dielectric charging in the dielectriclayer 219 is fulfilled by separating the actuation and signalelectrodes, which allow an AC signal and no DC bias from beingtransmitted in the signal electrodes. In the embodiment of FIG. 3, therespective electrical connections between bump 250 a, 250 b and topactuation electrode 220 a, 220 b can prevent the dielectric charging inthe dielectric 252.

Referring now to FIGS. 4A and 4B, FIG. 4A illustrates a top view andFIG. 4B illustrates a cross-sectional view along line 4B-4B of acontact-type MEMS switch 400 in accordance with another embodiment ofthe present disclosure. MEMS switch 400 is substantially similar to MEMSswitch 200 but includes a metal contact 260 disposed above the seconddielectric layer 219, disposed below the top signal electrode 222, andelectrically coupled to the bottom signal electrode 218 by at least onevia 262. Upon application of the bias voltage on the actuation electrode212 a, top signal electrode 222 contacts metal contact 260 to switch thesignal lines on. In other words, a voltage difference is induced betweentop and bottom actuation electrodes to move the top signal electrode 222on the movable bridge member.

When the different actuation voltages are applied to the top (e.g.,electrode 220 a and/or 220 b) and bottom (e.g., electrodes 212 a and/or212 b) actuation electrodes, the voltage difference between actuationelectrodes will induce an electrostatic force, which makes the switchstructure 208 bend down and contact the top signal electrode 222 to thebottom signal electrodes (260, 218). It makes the electrical connectionbetween the separated bottom electrodes (218 a, 218 b), and then the RFsignal can be transmitted from bottom signal electrodes 218 a to 218 b.When the voltage difference is removed from the actuation electrodes,the switch structure 208 will move back to the original position andmake the RF signal not be transmitted from electrodes 218 a to 218 b.

Disadvantageously, in the traditional MEMS contact switch, dielectriccharging occurs in the dielectric layers between the top and bottomactuation electrodes.

FIG. 5 illustrates a cross-sectional view of a contact-type MEMS switch500 in accordance with yet another embodiment of the present disclosure.MEMS switch 500 is substantially similar to MEMS switch 300 but includesa metal contact 260 disposed above the second dielectric layer 219,disposed below the top signal electrode 222, and electrically coupled tothe bottom signal electrode 218 by at least one via 262.

Thus, the present disclosure provides for various embodiments of asemiconductor device. In one embodiment, a semiconductor device includesa MEMS switch including a substrate, a first dielectric layer disposedabove the substrate, and a bottom signal electrode, a bump, and a bottomactuation electrode disposed above the first dielectric layer. The MEMSswitch further includes a second dielectric layer enclosing the bottomsignal electrode, and a movable member including a top signal electrodedisposed above the bottom signal electrode and a top actuation electrodedisposed above the bottom actuation electrode and the bump, wherein thetop actuation electrode is electrically coupled to the bump.

In another embodiment, a MEMS switch includes a substrate, a firstdielectric layer disposed above the substrate, the first dielectriclayer including at least two support members, and a bottom signalelectrode disposed between two bumps, between two bottom actuationelectrodes, and above the first dielectric layer between the at leasttwo support members. The MEMS switch further includes a seconddielectric layer enclosing the bottom signal electrode, and a movablemember including a top signal electrode disposed above the bottom signalelectrode and disposed between two top actuation electrodes, whereineach of the top actuation electrodes is disposed above a respectivebottom actuation electrode and a respective bump, and wherein each ofthe top actuation electrodes is electrically coupled to the respectivebump by at least one via and one line through the first dielectriclayer.

The present disclosure also provides a method of fabricating a MEMSswitch. In one embodiment, the method includes providing a substrate,forming a first dielectric layer above the substrate, and forming abottom signal electrode, a bump, and a bottom actuation electrode abovethe first dielectric layer. The method further includes enclosing thebottom signal electrode with a second dielectric layer, providing amovable member including a top signal electrode disposed above thebottom signal electrode and a top actuation electrode disposed above thebottom actuation electrode and the bump, and electrically coupling thetop actuation electrode to the bump.

Although embodiments of the present disclosure have been described indetail, those skilled in the art should understand that they may makevarious changes, substitutions and alterations herein without departingfrom the spirit and scope of the present disclosure. Accordingly, allsuch changes, substitutions and alterations are intended to be includedwithin the scope of the present disclosure as defined in the followingclaims. In the claims, means-plus-function clauses are intended to coverthe structures described herein as performing the recited function andnot only structural equivalents, but also equivalent structures.

What is claimed is:
 1. A method of fabricating amicro-electro-mechanical systems (MEMS) switch, the method comprising:providing a substrate; forming a first dielectric layer disposed abovethe substrate; forming a bump above the first dielectric layer;providing a movable member including a top actuation electrode, whereinthe top actuation electrode is electrically coupled to the bump; andforming at least one support member that comprises the first dielectriclayer and is directly below the top actuation electrode.
 2. The methodof claim 1, further comprising forming a bottom signal electrode and abottom actuation electrode above the first dielectric layer.
 3. Themethod of claim 2, further comprising enclosing the bottom signalelectrode in a second dielectric layer.
 4. The method of claim 2,further comprising disposing the top actuation electrode above thebottom actuation electrode.
 5. The method of claim 2, wherein formingthe bump includes forming the bump between the bottom signal electrodeand the bottom actuation electrode.
 6. The method of claim 1, whereinthe movable member further includes a top signal electrode disposedabove the first dielectric layer.
 7. The method of claim 6, furthercomprising forming a metal contact below the top signal electrode andelectrically coupling the metal contact to a bottom signal electrode. 8.The method of claim 1, wherein the top actuation electrode iselectrically coupled to the bump by at least one via and one linethrough the first dielectric layer.
 9. A method of fabricating amicro-electro-mechanical systems (MEMS) switch, the method comprising:providing a substrate; forming a first dielectric layer above thesubstrate providing a movable member including two top actuationelectrodes above the first dielectric layer, and forming at least twosupport members that comprise the first dielectric layer and are eachdirectly below a respective top actuation electrode, wherein each of thetop actuation electrodes is disposed above a respective bump, andwherein each of the top actuation electrodes is electrically coupled tothe respective bump by at least one via and one line through the firstdielectric layer.
 10. The method of claim 9, further comprisingdisposing each of the bumps between a bottom signal electrode and abottom actuation electrode.
 11. The method of claim 10, furthercomprising enclosing the bottom signal electrode in a second dielectriclayer.
 12. The method of claim 9, wherein each of the bumps is comprisedof a dielectric layer disposed above a metal layer, or each of the bumpsis comprised of a metal.
 13. The method of claim 9, wherein the movablemember further includes a top signal electrode disposed above the firstdielectric layer.
 14. The method of claim 13, further comprising forminga metal contact disposed above a second dielectric layer, disposed belowthe top signal electrode, and electrically coupled to a bottom signalelectrode.
 15. A method of fabricating a micro-electro-mechanicalsystems (MEMS) switch, the method comprising: providing a substrate;forming a first dielectric layer above the substrate; forming a bumpabove the first dielectric layer; providing a movable member including atop actuation electrode disposed above the bump; forming a conductivecomponent for coupling the top actuation electrode to the bump; andforming at least one support member that comprises the first dielectriclayer that is directly below the top actuation electrode.
 16. The methodof claim 15, wherein the at least one support member contacts an end ofthe top actuation electrode.
 17. The method of claim 15, wherein formingthe bump includes forming the bump between a bottom signal electrode anda bottom actuation electrode.
 18. The method of claim 17, whereinforming the bump includes forming the bump as a metal layer having athickness greater than the bottom actuation electrode or as a dielectriclayer over a metal layer having a total thickness greater than thebottom actuation electrode.
 19. The method of claim 15, wherein theconductive component comprises at least one via and one line through thefirst dielectric layer.
 20. The method of claim 15, further comprisingforming a metal contact above a second dielectric layer and below a topsignal electrode, and electrically coupling the metal contact to abottom signal electrode.